Etch delineation of defects in phosphosilicate glass layers

Etch delineation of defects in phosphosilicate glass layers

A special etch has been developed to help delineate cracks and pin holes in phosphosilicate glass (PSG) layers over a silicon substrate. The etch darkens the crack and in most cases expands the visible region of the crack by a factor of five to ten times, thus making it readily visible using low pow...

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Veröffentlicht in:Microelectronics and reliability 1982, Vol.22 (3), p.611-613
Hauptverfasser: Garg, Shyam G., Nevin, Joseph H., Bailey, Richard A., Sefick, Stephen A.
Format: Artikel
Sprache:eng
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Zusammenfassung:A special etch has been developed to help delineate cracks and pin holes in phosphosilicate glass (PSG) layers over a silicon substrate. The etch darkens the crack and in most cases expands the visible region of the crack by a factor of five to ten times, thus making it readily visible using low power microscopy.
ISSN:0026-2714
1872-941X
DOI:10.1016/0026-2714(82)90035-X