Current-voltage characteristics of metal-titanium dioxide-silicon structures

Metal-titanium dioxide-silicon capacitors were fabricated using electron- beam-evaporated titanium dioxide as the insulating layer. The effects of the titanium dioxide deposition conditions and post-deposition oxidation on the current-voltage characteristics were investigated. A time-dependent current was observed and modeled. Diffusion of the titanium from the titanium dioxide layer into the p-type silicon substrates during oxidation of the titanium dioxide film resulted in an n-type diffused layer. Leakage current densities as low as 10 -9 A in -2 at 10 V applied bias were obtained for a 1000 Å film of titanium dioxide.