Temperature dependence of electrical properties in Be-implanted semi-insulating GaAs
The Hall coefficient and sheet resistivity have been measured as functions of temperature for Cr-doped semi-insulating GaAs implanted with 100-keV Be ions at fluences between 1×1013 and 5×1015 cm−2. Impurity conduction influences or dominates hole transport processes at all temperatures for fluences...
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| Veröffentlicht in: | Journal of applied physics 1977-06, Vol.48 (6), p.2559-2564 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | The Hall coefficient and sheet resistivity have been measured as functions of temperature for Cr-doped semi-insulating GaAs implanted with 100-keV Be ions at fluences between 1×1013 and 5×1015 cm−2. Impurity conduction influences or dominates hole transport processes at all temperatures for fluences of 1×1014, 4×1014, and 5×1015 cm−2, but is evident only for T |
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| ISSN: | 0021-8979 1089-7550 |
| DOI: | 10.1063/1.323973 |