Singular instabilities on LPE GaAs, CVD Si, and MBE InP growth surfaces

Singular instabilities at crystal growth interfaces of group-IV and III-V semiconductors lead to as-grown surfaces optical devices, however, requirethe achievement of smoth planar layers. We consider the stability of surfaces with respect to singular instabilities and show that stable planar growth...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Appl. Phys. Lett.; (United States) 1977-01, Vol.30 (2), p.75-78
Hauptverfasser: Rode, D. L., Wagner, W. R., Schumaker, N. E.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Singular instabilities at crystal growth interfaces of group-IV and III-V semiconductors lead to as-grown surfaces optical devices, however, requirethe achievement of smoth planar layers. We consider the stability of surfaces with respect to singular instabilities and show that stable planar growth interfaces occur at slight deviati8ons from the singular orientation where monatomic growth steps are uniformly arrayed to minimize the interfacial energy resulting from step-step attractive interactions. These results are applied to the elimination of crystal growth terraces in LPE AlGaAs-GaAs laser material. Similar considerations appear to explain pyramid formations on CVD Si and on MBE InP.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.89293