Investigation of ion-implanted GaP layers by ellipsometry

Ion-implanted gallium-phosphide layers have been examined by ellipsometry. This technique provides a nondestructive means of measuring radiation damage. The index of refraction increases with ion dose except when ion-beam-radiation annealing causes a decrease in the extinction coefficient. A marked difference is observed in radiation-damage annealing between light and heavy ions. A computer calculation was performed to investigate the variation in the complex index of refraction due to implanted-ion fluence; agreement with experimental data was obtained.