Tailoring of crystalline structure of carbon nitride for superior photocatalytic hydrogen evolution

A long-range atomic order carbon nitride layer plane is more favorable for the diffusion of electrons and holes to surface sites for photocatalytic reactions. [Display omitted] Light absorption and carrier transfer, are two sequential and complementary steps related to photocatalysis performance, wh...

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Veröffentlicht in:Journal of colloid and interface science 2019-11, Vol.556, p.324-334
Hauptverfasser: Huang, Shuquan, Xu, Yuanguo, Ge, Feiyue, Tian, Dong, Zhu, Xingwang, Xie, Meng, Xu, Hui, Li, Huaming
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Sprache:eng
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Zusammenfassung:A long-range atomic order carbon nitride layer plane is more favorable for the diffusion of electrons and holes to surface sites for photocatalytic reactions. [Display omitted] Light absorption and carrier transfer, are two sequential and complementary steps related to photocatalysis performance, whereas the collective integration of these two aspects into graphitic carbon nitride (g-C3N4) photocatalyst through polycondensation optimization have seldom been achieved. Herein, we report on tailoring the crystalline structure of g-C3N4 by avoiding the formation of incompletely reacted N-rich intermediates and selective breaking the hydrogen bonds between the layers of g-C3N4 simultaneously. The obtained layer plane ordered porous carbon nitride (LOP-CN) material shows efficient photocatalytic H2 generation performance. The highest H2 evolution rate achieved is 53.8 μmol under λ ≥ 400 nm light irradiation, which is 7.4 times higher than that of g-C3N4 prepared by convention thermal polycondensation. The substantially boosted photocatalytic activity is mainly ascribed to the efficient charge separation on long-range atomic order layer plane and the extended visible light harvesting ability. This work highlights the importance of crystalline structure tailoring in improving charge separation and light absorption of g-C3N4 photocatalyst for boosting its photocatalytic H2 evolution activity.
ISSN:0021-9797
1095-7103
DOI:10.1016/j.jcis.2019.08.069