de Haas-van Alphen measurements and phase shift analysis of electronic scattering anisotropy in solid solutions of Ga in Au

Measurements of the electronic scattering anisotropy due to dilute concentrations of gallium in gold have been carried out using the de Haas-van Alphen effect. These measurements have been analyzed using the partial wave approach, and the results have been compared with those for other noble metal-h...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:J. Low Temp. Phys.; (United States) 1977-03, Vol.26 (5-6), p.945-951
Hauptverfasser: Dye, D. H., Ketterson, J. B., Lowndes, D. H., Crabtree, G. W., Windmiller, L. R.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Measurements of the electronic scattering anisotropy due to dilute concentrations of gallium in gold have been carried out using the de Haas-van Alphen effect. These measurements have been analyzed using the partial wave approach, and the results have been compared with those for other noble metal-heterovalent impurity systems. Gallium, which has a valence difference of 2 with respect to gold, exhibits a much smaller change in lattice constant upon alloying than any of the other noble metal-heterovalent impurity systems studied to date. The results reported here indicate that the Friedel phase shifts for solid solutions of Ga in Au are considerably different from those for the other systems, in which impurity-induced strain is expected to play a larger role. The phase shifts for solid solutions of Ga indicate that the Coulomb potential is effectively screened within a relatively short distance from the impurity site.
ISSN:0022-2291
1573-7357
DOI:10.1007/BF00654886