Resistive switching behaviors and memory logic functions in single MnOx nanorod modulated by moisture

Resistive switching behaviors and memory logic functions in single MnOx nanorod modulated by moisture

A device with the lateral structure of Ag|MnOx|Ag was developed using a single MnOx nanorod. The device showed a typical resistor property under dry ambience, while it demonstrated the reversion between resistor and memristor under moisture ambience. Memory logic functions including logic gates and...

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Veröffentlicht in:Chemical communications (Cambridge, England) England), 2019, Vol.55 (67), p.9915-9918
Hauptverfasser: Zhou, Guangdong, Sun, Bai, Ren, Zhijun, Wang, Lidan, Xu, Cunyun, Wu, Bo, Li, Ping, Yao, Yanqing, Duan, Shukai
Format: Artikel
Sprache:eng
Schlagworte:
Ambience
Logic circuits
Memristors
Moisture
Nanorods
Resistors
Reversion
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Zusammenfassung:A device with the lateral structure of Ag|MnOx|Ag was developed using a single MnOx nanorod. The device showed a typical resistor property under dry ambience, while it demonstrated the reversion between resistor and memristor under moisture ambience. Memory logic functions including logic gates and displays were feasible under the dual input of electric and moisture signals.
ISSN:1359-7345
1364-548X
DOI:10.1039/c9cc04069b