Optical determination of carrier mobility in GaAs
We analyze the radiative recombination of free electrons to acceptor-bond holes in GaAs at helium temperatures and obtain the energy distribution of conduction-band electrons in applied weak electric fields. We are able to determine electron temperatures, drift momenta, and mobilities as functions o...
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| Veröffentlicht in: | Solid state communications 1976, Vol.18 (7), p.861-863 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | We analyze the radiative recombination of free electrons to acceptor-bond holes in GaAs at helium temperatures and obtain the energy distribution of conduction-band electrons in applied weak electric fields. We are able to determine electron temperatures, drift momenta, and mobilities as functions of field. Direct experimental proof is given for mobility enhancement through screening by a free-carrier plasma. |
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| ISSN: | 0038-1098 1879-2766 |
| DOI: | 10.1016/0038-1098(76)90224-6 |