On the theory of MIS capacitance
A theory of MIS capacitance taking into account the two-band situation in the space-charge region is presented. The simple and universal C-formulas can be used for extrinsic as well as for intrinsic semiconductor in arbitrary (excluding degeneracy or quantization) band bending near the interface. Pr...
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| Veröffentlicht in: | Solid-state electronics 1976-01, Vol.19 (9), p.745-758 |
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| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | A theory of MIS capacitance taking into account the two-band situation in the space-charge region is presented. The simple and universal C-formulas can be used for extrinsic as well as for intrinsic semiconductor in arbitrary (excluding degeneracy or quantization) band bending near the interface. Previous results are obtained in a more clear and conventient way and are extended to arbitrary steady-state conditions. |
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| ISSN: | 0038-1101 1879-2405 |
| DOI: | 10.1016/0038-1101(76)90153-2 |