MIS structure GaAs-Ge3N4-Al
A low‐temperature method is described of obtaining MIS‐structures of the type Ge3N4–GaAs. Some results are given on the physical properties of the structures. Es wird eine Niedertemperaturmethode zur Erzielung von MIS‐Strukturen vom Typ Ge3N4–GaAs beschrieben. Einige Ergebnisse der physikalischen Ei...
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| Veröffentlicht in: | Physica status solidi. A, Applied research Applied research, 1976-07, Vol.36 (1), p.73-79 |
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| container_end_page | 79 |
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| container_issue | 1 |
| container_start_page | 73 |
| container_title | Physica status solidi. A, Applied research |
| container_volume | 36 |
| creator | Bagratishvili, G. D. Dzhanelidze, R. B. Kurdiani, N. I. Saksaganskii, O. V. |
| description | A low‐temperature method is described of obtaining MIS‐structures of the type Ge3N4–GaAs. Some results are given on the physical properties of the structures.
Es wird eine Niedertemperaturmethode zur Erzielung von MIS‐Strukturen vom Typ Ge3N4–GaAs beschrieben. Einige Ergebnisse der physikalischen Eigenschaften dieser Strukturen werden mitgeteilt. |
| doi_str_mv | 10.1002/pssa.2210360107 |
| format | Article |
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Es wird eine Niedertemperaturmethode zur Erzielung von MIS‐Strukturen vom Typ Ge3N4–GaAs beschrieben. Einige Ergebnisse der physikalischen Eigenschaften dieser Strukturen werden mitgeteilt.</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/pssa.2210360107</doi><tpages>7</tpages></addata></record> |
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| ispartof | Physica status solidi. A, Applied research, 1976-07, Vol.36 (1), p.73-79 |
| issn | 0031-8965 1521-396X |
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| source | Wiley Online Library Journals Frontfile Complete |
| title | MIS structure GaAs-Ge3N4-Al |
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