Electrical effects of SiC inclusions in EFG silicon ribbon solar cells

Electrical effects of SiC inclusions in EFG silicon ribbon solar cells

The electrical effects of included silicon carbide (SiC) particles in edge-defined film-fed grown silicon ribbons have been examined. By employing a scanning electron microscope operated in the electron-beam-induced current mode, as well as observing the effects of SiC particles on solar-cell charac...

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Veröffentlicht in:J. Appl. Phys.; (United States) 1976-06, Vol.47 (6), p.2614-2619
Hauptverfasser: Hari Rao, C. V., Bates, H. E., Ravi, K. V.
Format: Artikel
Sprache:eng
Schlagworte:
140501 - Solar Energy Conversion- Photovoltaic Conversion
360104 - Metals & Alloys- Physical Properties
CARBIDES
CARBON COMPOUNDS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRICAL PROPERTIES
ELECTRON MICROSCOPY
ELEMENTS
ETCHING
INCLUSIONS
MATERIALS SCIENCE
MICROSCOPY
PARTICLES
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
RECOMBINATION
SEMIMETALS
SILICON
SILICON CARBIDES
SILICON COMPOUNDS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR ENERGY
SURFACE FINISHING
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Zusammenfassung:The electrical effects of included silicon carbide (SiC) particles in edge-defined film-fed grown silicon ribbons have been examined. By employing a scanning electron microscope operated in the electron-beam-induced current mode, as well as observing the effects of SiC particles on solar-cell characteristics, the electrical activity of particles and particle-generated defects were studied. The influence of SiC particles largely appears to be a result of impurity accumulation around them rather than a direct effect of the inclusions.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.322980