III-V on silicon avalanche photodiodes by heteroepitaxy

III-V on silicon avalanche photodiodes by heteroepitaxy

We demonstrate a III-V avalanche photodiode (APD) grown by heteroepitaxy on silicon. This InGaAs/InAlAs APD exhibits low dark current, gain >20, external quantum efficiency >40%, and similar low excess noise, k∼0.2, as InAlAs APDs on InP.

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Bibliographische Detailangaben
Veröffentlicht in:Optics letters 2019-07, Vol.44 (14), p.3538-3541
Hauptverfasser: Yuan, Yuan, Jung, Daehwan, Sun, Keye, Zheng, Jiyuan, Jones, Andrew H, Bowers, John E, Campbell, Joe C
Format: Artikel
Sprache:eng
Schlagworte:
Avalanche diodes
Dark current
Indium aluminum arsenides
Photodiodes
Quantum efficiency
Silicon
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Beschreibung
Zusammenfassung:We demonstrate a III-V avalanche photodiode (APD) grown by heteroepitaxy on silicon. This InGaAs/InAlAs APD exhibits low dark current, gain >20, external quantum efficiency >40%, and similar low excess noise, k∼0.2, as InAlAs APDs on InP.
ISSN:0146-9592
1539-4794
DOI:10.1364/OL.44.003538