Distribution of dopant in SiO sub 2 - Si
The distribution of dopant in SiO sub 2 - Si during dry thermal oxidation and postoxidation anneal is studied. Analytical expressions for the distribution functions are derived. Cases in which t sup n not equal to t sup 1/2 are discussed, with particular attention to the effect of n greater than 1/2...
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| Veröffentlicht in: | Journal of applied physics 1976-01, Vol.47 (1), p.3159-3166 |
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| Sprache: | eng |
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| container_end_page | 3166 |
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| container_issue | 1 |
| container_start_page | 3159 |
| container_title | Journal of applied physics |
| container_volume | 47 |
| creator | Av-Ron, Moshe Shatzkes, Morris Burkhardt, P J Cadoff, I |
| description | The distribution of dopant in SiO sub 2 - Si during dry thermal oxidation and postoxidation anneal is studied. Analytical expressions for the distribution functions are derived. Cases in which t sup n not equal to t sup 1/2 are discussed, with particular attention to the effect of n greater than 1/2 on the distribution of the dopant in the oxide. Results concerning the distribution of B in the silicon are provided for various oxide thickness, oxidation temps., and anneal times. These results were obtained from spreading-resistance measurements. |
| format | Article |
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Analytical expressions for the distribution functions are derived. Cases in which t sup n not equal to t sup 1/2 are discussed, with particular attention to the effect of n greater than 1/2 on the distribution of the dopant in the oxide. Results concerning the distribution of B in the silicon are provided for various oxide thickness, oxidation temps., and anneal times. 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Analytical expressions for the distribution functions are derived. Cases in which t sup n not equal to t sup 1/2 are discussed, with particular attention to the effect of n greater than 1/2 on the distribution of the dopant in the oxide. Results concerning the distribution of B in the silicon are provided for various oxide thickness, oxidation temps., and anneal times. 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Analytical expressions for the distribution functions are derived. Cases in which t sup n not equal to t sup 1/2 are discussed, with particular attention to the effect of n greater than 1/2 on the distribution of the dopant in the oxide. Results concerning the distribution of B in the silicon are provided for various oxide thickness, oxidation temps., and anneal times. These results were obtained from spreading-resistance measurements.</abstract></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 1976-01, Vol.47 (1), p.3159-3166 |
| issn | 0021-8979 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_22565702 |
| source | AIP Digital Archive |
| title | Distribution of dopant in SiO sub 2 - Si |
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