Distribution of dopant in SiO sub 2 - Si
The distribution of dopant in SiO sub 2 - Si during dry thermal oxidation and postoxidation anneal is studied. Analytical expressions for the distribution functions are derived. Cases in which t sup n not equal to t sup 1/2 are discussed, with particular attention to the effect of n greater than 1/2...
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| Veröffentlicht in: | Journal of applied physics 1976-01, Vol.47 (1), p.3159-3166 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | The distribution of dopant in SiO sub 2 - Si during dry thermal oxidation and postoxidation anneal is studied. Analytical expressions for the distribution functions are derived. Cases in which t sup n not equal to t sup 1/2 are discussed, with particular attention to the effect of n greater than 1/2 on the distribution of the dopant in the oxide. Results concerning the distribution of B in the silicon are provided for various oxide thickness, oxidation temps., and anneal times. These results were obtained from spreading-resistance measurements. |
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| ISSN: | 0021-8979 |