Large‐Area Synthesis of Superclean Graphene via Selective Etching of Amorphous Carbon with Carbon Dioxide

Contamination commonly observed on the graphene surface is detrimental to its excellent properties and strongly hinders its application. It is still a great challenge to produce large‐area clean graphene film in a low‐cost manner. Herein, we demonstrate a facile and scalable chemical vapor deposition approach to synthesize meter‐sized samples of superclean graphene with an average cleanness of 99 %, relying on the weak oxidizing ability of CO2 to etch away the intrinsic contamination, i.e., amorphous carbon. Remarkably, the elimination of amorphous carbon enables a significant reduction of polymer residues in the transfer of graphene films and the fabrication of graphene‐based devices and promises strongly enhanced electrical and optical properties of graphene. The facile synthesis of large‐area superclean graphene would open the pathway for both fundamental research and industrial applications of graphene, where a clean surface is highly needed. Spic and span! A facile and scalable chemical vapor deposition approach was developed to synthesize meter‐sized samples of superclean graphene with an average cleanness of 99 %. The weak oxidizing ability of CO2 was essential to selectively etch away the intrinsic contamination, amorphous carbon, on the graphene surface.