Diode-pumped 640 nm Pr:YLF regenerative laser pulse amplifier

We demonstrated regenerative laser pulse amplification at 640 nm for the first time, to the best of our knowledge, with a mode-locked Pr -doped LiYF (Pr :YLF) oscillator as a picosecond seed pulse. A regenerative amplifier with a Pr :YLF crystal was continuously pumped by a multimode InGaN diode las...

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Veröffentlicht in:	Optics letters 2019-07, Vol.44 (13), p.3370-3373
Hauptverfasser:	Sugiyama, Naoto, Fujita, Shogo, Hara, Yusaku, Tanaka, Hiroki, Kannari, Fumihiko
Format:	Artikel
Sprache:	eng
Schlagworte:	Amplifiers Diodes Lasers Second harmonic generation Semiconductor lasers
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Zusammenfassung:	We demonstrated regenerative laser pulse amplification at 640 nm for the first time, to the best of our knowledge, with a mode-locked Pr -doped LiYF (Pr :YLF) oscillator as a picosecond seed pulse. A regenerative amplifier with a Pr :YLF crystal was continuously pumped by a multimode InGaN diode laser. At an absorbed pump power of 3.1 W, we obtained amplified pulse energy of 13 μJ at 10 kHz with an excellent spatial beam quality of M ∼1.1, demonstrated second-harmonic generation, and obtained a 320 nm pulse energy of 5.9 μJ.
ISSN:	0146-9592 1539-4794
DOI:	10.1364/OL.44.003370