Key factors affecting photoelectrochemical performance of g-C3N4 polymer films

Key factors affecting photoelectrochemical performance of g-C3N4 polymer films

We investigated the relationship between crystallinity, deep trap states and PEC performance of g-C3N4 photoelectrodes. Long-lived charge carriers were present in the more poorly crystalline samples, due to deeper trap states, which inversely correlated with photoelectrochemical performance. The cha...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Chemical communications (Cambridge, England) England), 2019, Vol.55 (50), p.7191-7194
Hauptverfasser: Ruan, Qiushi, Bayazit, Mustafa K, Vankayala Kiran, Xie, Jijia, Wang, Yiou, Tang, Junwang
Format: Artikel
Sprache:eng
Schlagworte:
Carbon nitride
Crystal structure
Crystallinity
Current carriers
Diffusion length
Polymer films
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We investigated the relationship between crystallinity, deep trap states and PEC performance of g-C3N4 photoelectrodes. Long-lived charge carriers were present in the more poorly crystalline samples, due to deeper trap states, which inversely correlated with photoelectrochemical performance. The charge diffusion length in a compact g-C3N4 film was determined to be ca. 1000 nm.
ISSN:1359-7345
1364-548X
DOI:10.1039/c9cc03084k