Photoluminescence from Be-implanted GaAs

Low-temperature (6 °K) photoluminescence data on Be-implanted GaAs are presented. A luminescence band centered at 1.4902 eV is related to recombination involving the Be acceptor. Annealing to 900 °C with Si3N4 encapsulation is shown to optically activate the implanted Be and reorder the lattice. The...

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Veröffentlicht in:	Applied physics letters 1975-11, Vol.27 (10), p.567-569
Hauptverfasser:	Chatterjee, Pallab K., Vaidyanathan, K. V., McLevige, W. V., Streetman, B. G.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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Zusammenfassung:	Low-temperature (6 °K) photoluminescence data on Be-implanted GaAs are presented. A luminescence band centered at 1.4902 eV is related to recombination involving the Be acceptor. Annealing to 900 °C with Si3N4 encapsulation is shown to optically activate the implanted Be and reorder the lattice. The ionization energy of Be is estimated to be 22±3 meV.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.88289