Determination of semiconductor surface properties using surface acoustic waves

Surface properties of semiconductors may be determined by measuring the change in attenuation constant, acoustoelectric voltage, and convolution output of a semiconductor on a lithium niobate acoustic surface wave convolver structure. The change is caused by the application of a dc pulse voltage. Experimental results are presented for both p- and n-type silicon. The method is contactless, sensitive, and requires no sample preparation except polishing of one side. Also it is possible to study the variations of the semiconductor surface states along the direction of propagation of the surface wave by proper modification of this method.