High-Speed Silicon-Germanium Electronics

Electronic devices that outperform traditional silicon technology yet remain compatible with standard manufacturing methods have been developed. An alloy of silicon and germanium can form the basis of exceptionally high speed transistors.

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Bibliographische Detailangaben
Veröffentlicht in:	Scientific American 1994-03, Vol.270 (3), p.62-67
1. Verfasser:	Meyerson, Bernard S.
Format:	Magazinearticle
Sprache:	eng
Schlagworte:	Alloys Applied sciences Atoms Electric current Electronics Electrons Epitaxy Exact sciences and technology Germanium Materials Microelectronic fabrication (materials and surfaces technology) Microelectronics Polymers R&D Research & development Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductors Silicon Technology Transistors Vapor deposition
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Beschreibung
Zusammenfassung:	Electronic devices that outperform traditional silicon technology yet remain compatible with standard manufacturing methods have been developed. An alloy of silicon and germanium can form the basis of exceptionally high speed transistors.
ISSN:	0036-8733 1946-7087
DOI:	10.1038/scientificamerican0394-62