Unraveling the Interfacial Charge Migration Pathway at the Atomic Level in a Highly Efficient Z‐Scheme Photocatalyst

A highly efficient Z‐scheme photocatalytic system constructed with 1D CdS and 2D CoS2 exhibited high photocatalytic hydrogen‐evolution activity of 5.54 mmol h−1 g−1 with an apparent quantum efficiency of 10.2 % at 420 nm. More importantly, its interfacial charge migration pathway was unraveled: The...

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Veröffentlicht in:Angewandte Chemie International Edition 2019-08, Vol.58 (33), p.11329-11334
Hauptverfasser: Wang, Pengfei, Mao, Yueshuang, Li, Lina, Shen, Zhurui, Luo, Xiao, Wu, Kaifeng, An, Pengfei, Wang, Haitao, Su, Lina, Li, Yi, Zhan, Sihui
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Sprache:eng
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Zusammenfassung:A highly efficient Z‐scheme photocatalytic system constructed with 1D CdS and 2D CoS2 exhibited high photocatalytic hydrogen‐evolution activity of 5.54 mmol h−1 g−1 with an apparent quantum efficiency of 10.2 % at 420 nm. More importantly, its interfacial charge migration pathway was unraveled: The electrons are efficiently transferred from CdS to CoS2 through a transition atomic layer connected by Co–S5.8 coordination, thus resulting in more photogenerated carriers participating in surface reactions. Furthermore, the charge‐trapping and charge‐transfer processes were investigated by transient absorption spectroscopy, which gave an estimated charge‐separation yield of approximately 91.5 % and a charge‐separated‐state lifetime of approximately (5.2±0.5) ns in CdS/CoS2. This study elucidates the key role of interfacial atomic layers in heterojunctions and will facilitate the development of more efficient Z‐scheme photocatalytic systems. A whole lot of electrons and holes: A highly efficient Z‐scheme photocatalyst was constructed from 1D CdS and 2D CoS2. Experimental and theoretical evidence suggests that the transition layer at the interface enables electrons to be transferred from CdS to CoS2, thus resulting in more photogenerated electrons and holes participating in the surface photocatalytic reaction.
ISSN:1433-7851
1521-3773
DOI:10.1002/anie.201904571