Synergetic Enhancement of Thermoelectric Performance by Selective Charge Anderson Localization–Delocalization Transition in n‑Type Bi-Doped PbTe/Ag2Te Nanocomposite
Considerable efforts have been devoted to enhancing thermoelectric performance, by employing phonon scattering from nanostructural architecture, and material design using phonon-glass and electron-crystal concepts. The nanostructural approach helps to lower thermal conductivity but has limited effec...
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Veröffentlicht in: | ACS nano 2019-04, Vol.13 (4), p.3806-3815 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Considerable efforts have been devoted to enhancing thermoelectric performance, by employing phonon scattering from nanostructural architecture, and material design using phonon-glass and electron-crystal concepts. The nanostructural approach helps to lower thermal conductivity but has limited effect on the power factor. Here, we demonstrate selective charge Anderson localization as a route to maximize the Seebeck coefficient while simultaneously preserving high electrical conductivity and lowering the lattice thermal conductivity. We confirm the viability of interface potential modification in an n-type Bi-doped PbTe/Ag2Te nanocomposite and the resulting enhancement in thermoelectric figure-of-merit ZT. The introduction of random potentials via Ag2Te nanoparticle distribution using extrinsic phase mixing was determined using scanning tunneling spectroscopy measurements. When the Ag2Te undergoes a structural phase transition (T > 420 K) from monoclinic β-Ag2Te to cubic α-Ag2Te, the band gap in the α-Ag2Te increases due to the p–d hybridization. This results in a decrease in the potential barrier height, which gives rise to partial delocalization of the electrons, while wave packets of the holes are still in a localized state. Using this strategic approach, we achieved an exceptionally high thermoelectric figure-of-merit in n-type PbTe materials, a ZT greater than 2.0, suitable for waste heat power generation. |
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ISSN: | 1936-0851 1936-086X |
DOI: | 10.1021/acsnano.8b08579 |