Far-infrared radiation isolator
In some CO 2 laser systems it is necessary to isolate the amplifier sections from reflected light, n-type InSb is shown to be the best semiconductor to use in a free electron Faraday isolator. Theoretical properties of such a device are discussed and compared with measurements made on a prototype is...
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Veröffentlicht in: | IEEE (Inst. Electr. Electron. Eng.) J. Quant. Electron., v. QE-10, no. 2, pp. 273-279 v. QE-10, no. 2, pp. 273-279, 1974-02, Vol.10 (2), p.273-279 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | In some CO 2 laser systems it is necessary to isolate the amplifier sections from reflected light, n-type InSb is shown to be the best semiconductor to use in a free electron Faraday isolator. Theoretical properties of such a device are discussed and compared with measurements made on a prototype isolator. |
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ISSN: | 0018-9197 1558-1713 |
DOI: | 10.1109/JQE.1974.1145808 |