Far-infrared radiation isolator

In some CO 2 laser systems it is necessary to isolate the amplifier sections from reflected light, n-type InSb is shown to be the best semiconductor to use in a free electron Faraday isolator. Theoretical properties of such a device are discussed and compared with measurements made on a prototype is...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE (Inst. Electr. Electron. Eng.) J. Quant. Electron., v. QE-10, no. 2, pp. 273-279 v. QE-10, no. 2, pp. 273-279, 1974-02, Vol.10 (2), p.273-279
Hauptverfasser: Boord, W., Yoh-Han Pao, Phelps, F., Claspy, P.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:In some CO 2 laser systems it is necessary to isolate the amplifier sections from reflected light, n-type InSb is shown to be the best semiconductor to use in a free electron Faraday isolator. Theoretical properties of such a device are discussed and compared with measurements made on a prototype isolator.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.1974.1145808