The X-Ray laue diffraction near the absorption k-edges of the GaAs lattice atoms

The instrumental effect on the measured Laue‐diffracted intensities is theoretically studied for a single‐crystal spectrometer (SCS). The calculated parameters A and B entering the relation In S  A t + B between the logarithm of intensity jumps (S  i2/i1) and the crystal thickness are in agreement with those measured near the absorption K‐edges of Ga and As at different reflections (hkl). The influence of wave fields with different polarizations on these parameters is also considered. It is shown both theoretically and experimentally that at a transition from (III) to (III) Laue reflections the quantity A which corresponds to absorption processes, is unchanged while the parameter B describes the intensity jumps fairly well. [Russian Text Ignored].