Reversible microstructural control of electrical properties of WSe2
Microstructural occlusions in semiconductor single crystals of WSe2 affect the electrical properties of the material. The presence of the occlusions, which are believed to be a new phase of tungsten selenide, W3Se4, increases the size of the band gap by a factor of 2. Annealing at temperatures just...
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| Veröffentlicht in: | Applied physics letters 1973-10, Vol.23 (8), p.460-461 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | Microstructural occlusions in semiconductor single crystals of WSe2 affect the electrical properties of the material. The presence of the occlusions, which are believed to be a new phase of tungsten selenide, W3Se4, increases the size of the band gap by a factor of 2. Annealing at temperatures just below the decomposition temperature of WSe2 causes the occlusions to revert back to the normal WSe2 structure. |
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| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.1654958 |