Spin and valley dependent electronic transport in molybdenum disulfide considering up to the second order k-dependent terms: a more exact solution

Previous studies of electronic transport in molybdenum disulfide (MoS2) are restricted to the first order approximation of the Hamiltonian. In this paper, to obtain more exact results, we firstly present an analytical solution for the Hamiltonian of MoS2 when terms up to the second order (quadratic k-dependent) of the Hamiltonian are taken into account. Our analytical solution is easily applicable to study the transport properties of any single and multi-junctions of MoS2. Then, we propose a device composed of two ferromagnetic barriers with anti-parallel exchange fields and we show that this device has interesting properties such as spin and valley filtering with perfect spin and valley polarizations. Using this device, we can easily switch both spin and valley polarizations to their opposite polarizations only by using electric voltage, which is of fundamental importance in quantum computation and the next generation of logic devices.