Intrinsic AM noise in singly tuned IMPATT diode oscillators

Intrinsic AM noise in singly tuned IMPATT diode oscillators

Analytical relationships are derived for the ratio of the intrinsic AM to FM noise, and for the intrinsic AM noise of IMPATT diode oscillators. The theory is confirmed experimentally for a silicon n + -p diode and an n-gallium-arsenide Schottky barrier diode operating at low and intermediate signal...

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Veröffentlicht in:IEEE transactions on electron devices 1973-08, Vol.20 (8), p.752-754
1. Verfasser: Goedbloed, J.J.
Format: Artikel
Sprache:eng
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Zusammenfassung:Analytical relationships are derived for the ratio of the intrinsic AM to FM noise, and for the intrinsic AM noise of IMPATT diode oscillators. The theory is confirmed experimentally for a silicon n + -p diode and an n-gallium-arsenide Schottky barrier diode operating at low and intermediate signal levels.
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1973.17738