Computational modelling of atomic layer etching of chlorinated germanium surfaces by argon

Computational modelling of atomic layer etching of chlorinated germanium surfaces by argon

The atomic layer etching of chlorinated germanium surfaces under argon bombardment was simulated using molecular dynamics with a newly fitted Tersoff potential. The chlorination energy determines the threshold energy for etching and the number of etched atoms in the bombardment phase. Etch rate is d...

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Veröffentlicht in:Physical chemistry chemical physics : PCCP 2019-03, Vol.21 (11), p.5898-5902
Hauptverfasser: Zhang, Shenli, Huang, Yihan, Tetiker, Gulcin, Sriraman, Saravanapriyan, Paterson, Alex, Faller, Roland
Format: Artikel
Sprache:eng
Schlagworte:
Argon
Atomic properties
Bombardment
Chlorination
Computer simulation
Etching
Molecular dynamics
Nuclear weapons
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Zusammenfassung:The atomic layer etching of chlorinated germanium surfaces under argon bombardment was simulated using molecular dynamics with a newly fitted Tersoff potential. The chlorination energy determines the threshold energy for etching and the number of etched atoms in the bombardment phase. Etch rate is determined by bombardment energy.
ISSN:1463-9076
1463-9084
DOI:10.1039/c9cp00125e