On the Current–Voltage Hysteresis in Perovskite Solar Cells: Dependence on Perovskite Composition and Methods to Remove Hysteresis

Current‐density–voltage (J–V) hysteresis in perovskite solar cells (PSCs) is a critical issue because it is related to power conversion efficiency and stability. Although parameters affecting the hysteresis have been already reported and reviewed, little investigation is reported on scan‐direction‐dependent J–V curves depending on perovskite composition. This review investigates J–V hysteric behaviors depending on perovskite composition in normal mesoscopic and planar structure. In addition, methodologies toward hysteresis‐free PSCs are proposed. There is a specific trend in hysteresis in terms of J–V curve shape depending on composition. Ion migration combined with nonradiative recombination near interfaces plays a critical role in generating hysteresis. Interfacial engineering is found to be an effective method to reduce the hysteresis; however, bulk defect engineering is the most promising method to remove the hysteresis. Among the studied methods, KI doping is proved to be a universal approach toward hysteresis‐free PSCs regardless of perovskite composition. It is proposed from the current studies that engineering of perovskite film near the electron transporting layer (ETL) and the hole transporting layer (HTL) is of vital importance for achieving hysteresis‐free PSCs and extremely high efficiency. Photocurrent–voltage hysteresis in perovskite solar cells (PSCs) induced by ion migration combined with nonradiative recombination near the interface depends on perovskite composition and device structure. Among the methods used in the attempt to reduce the hysteresis, potassium‐ion doping is found to be a universal approach toward hysteresis‐free PSCs regardless of perovskite composition.