Preparation, single crystal growth, and characterization of PtSi and PtGe
Due to the highly exothermic reaction of platinum with molten silicon or germanium, a special self-regulating method was employed to produce large polycrystalline ingots of PtSi and PtGe. The equipment and techniques used for the syntheses of materials and the growth of large single crystal ingots a...
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| Veröffentlicht in: | Materials research bulletin 1972-01, Vol.7 (10), p.1035-1040 |
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| container_title | Materials research bulletin |
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| creator | Baughman, R.J. Quinn, Rod K. |
| description | Due to the highly exothermic reaction of platinum with molten silicon or germanium, a special self-regulating method was employed to produce large polycrystalline ingots of PtSi and PtGe. The equipment and techniques used for the syntheses of materials and the growth of large single crystal ingots are presented. Resistivity, Seebeck coefficient, molar susceptibility, and bulk density were measured and are reported. Both materials showed temperature independent diamagnetism from 4K to 300K. |
| doi_str_mv | 10.1016/0025-5408(72)90155-9 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_21810383</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>0025540872901559</els_id><sourcerecordid>21810383</sourcerecordid><originalsourceid>FETCH-LOGICAL-c335t-dae4ab3cf6cf222778368f05d34f4ec61e0ffba76224a14f048fab81759aee8b3</originalsourceid><addsrcrecordid>eNp9kE1LAzEQhoMoWKv_wMOeRKGr-dpN9iJI0SoULKjnkM1O2sh2U5NUqb_ebSsePc1hnvdl5kHonOBrgkl5gzEt8oJjeSnoVYVJUeTVARoQKVjOKRWHaPCHHKOTGN8xxlwKMUBPswArHXRyvhtl0XXzFjITNjHpNpsH_5UWo0x3TWYWPWUSBPe9gzNvs1l6cbvlLE3gFB1Z3UY4-51D9PZw_zp-zKfPk6fx3TQ3jBUpbzRwXTNjS2Npf5uQrJQWFw3jloMpCWBray1KSrkm3PZ3Wl1LIopKA8iaDdHFvncV_McaYlJLFw20re7Ar6OiRBLMJOtBvgdN8DEGsGoV3FKHjSJYbb2prRS1laIEVTtvqupjt_sY9E98OggqGgedgcYFMEk13v1f8ANJOXSV</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>21810383</pqid></control><display><type>article</type><title>Preparation, single crystal growth, and characterization of PtSi and PtGe</title><source>Elsevier ScienceDirect Journals Complete</source><creator>Baughman, R.J. ; Quinn, Rod K.</creator><creatorcontrib>Baughman, R.J. ; Quinn, Rod K.</creatorcontrib><description>Due to the highly exothermic reaction of platinum with molten silicon or germanium, a special self-regulating method was employed to produce large polycrystalline ingots of PtSi and PtGe. The equipment and techniques used for the syntheses of materials and the growth of large single crystal ingots are presented. Resistivity, Seebeck coefficient, molar susceptibility, and bulk density were measured and are reported. Both materials showed temperature independent diamagnetism from 4K to 300K.</description><identifier>ISSN: 0025-5408</identifier><identifier>EISSN: 1873-4227</identifier><identifier>DOI: 10.1016/0025-5408(72)90155-9</identifier><language>eng</language><publisher>Elsevier Ltd</publisher><ispartof>Materials research bulletin, 1972-01, Vol.7 (10), p.1035-1040</ispartof><rights>1972</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c335t-dae4ab3cf6cf222778368f05d34f4ec61e0ffba76224a14f048fab81759aee8b3</citedby><cites>FETCH-LOGICAL-c335t-dae4ab3cf6cf222778368f05d34f4ec61e0ffba76224a14f048fab81759aee8b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/0025-5408(72)90155-9$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids></links><search><creatorcontrib>Baughman, R.J.</creatorcontrib><creatorcontrib>Quinn, Rod K.</creatorcontrib><title>Preparation, single crystal growth, and characterization of PtSi and PtGe</title><title>Materials research bulletin</title><description>Due to the highly exothermic reaction of platinum with molten silicon or germanium, a special self-regulating method was employed to produce large polycrystalline ingots of PtSi and PtGe. The equipment and techniques used for the syntheses of materials and the growth of large single crystal ingots are presented. Resistivity, Seebeck coefficient, molar susceptibility, and bulk density were measured and are reported. Both materials showed temperature independent diamagnetism from 4K to 300K.</description><issn>0025-5408</issn><issn>1873-4227</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1972</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LAzEQhoMoWKv_wMOeRKGr-dpN9iJI0SoULKjnkM1O2sh2U5NUqb_ebSsePc1hnvdl5kHonOBrgkl5gzEt8oJjeSnoVYVJUeTVARoQKVjOKRWHaPCHHKOTGN8xxlwKMUBPswArHXRyvhtl0XXzFjITNjHpNpsH_5UWo0x3TWYWPWUSBPe9gzNvs1l6cbvlLE3gFB1Z3UY4-51D9PZw_zp-zKfPk6fx3TQ3jBUpbzRwXTNjS2Npf5uQrJQWFw3jloMpCWBray1KSrkm3PZ3Wl1LIopKA8iaDdHFvncV_McaYlJLFw20re7Ar6OiRBLMJOtBvgdN8DEGsGoV3FKHjSJYbb2prRS1laIEVTtvqupjt_sY9E98OggqGgedgcYFMEk13v1f8ANJOXSV</recordid><startdate>19720101</startdate><enddate>19720101</enddate><creator>Baughman, R.J.</creator><creator>Quinn, Rod K.</creator><general>Elsevier Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>19720101</creationdate><title>Preparation, single crystal growth, and characterization of PtSi and PtGe</title><author>Baughman, R.J. ; Quinn, Rod K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c335t-dae4ab3cf6cf222778368f05d34f4ec61e0ffba76224a14f048fab81759aee8b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1972</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Baughman, R.J.</creatorcontrib><creatorcontrib>Quinn, Rod K.</creatorcontrib><collection>CrossRef</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Materials research bulletin</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Baughman, R.J.</au><au>Quinn, Rod K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Preparation, single crystal growth, and characterization of PtSi and PtGe</atitle><jtitle>Materials research bulletin</jtitle><date>1972-01-01</date><risdate>1972</risdate><volume>7</volume><issue>10</issue><spage>1035</spage><epage>1040</epage><pages>1035-1040</pages><issn>0025-5408</issn><eissn>1873-4227</eissn><abstract>Due to the highly exothermic reaction of platinum with molten silicon or germanium, a special self-regulating method was employed to produce large polycrystalline ingots of PtSi and PtGe. The equipment and techniques used for the syntheses of materials and the growth of large single crystal ingots are presented. Resistivity, Seebeck coefficient, molar susceptibility, and bulk density were measured and are reported. Both materials showed temperature independent diamagnetism from 4K to 300K.</abstract><pub>Elsevier Ltd</pub><doi>10.1016/0025-5408(72)90155-9</doi><tpages>6</tpages></addata></record> |
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| identifier | ISSN: 0025-5408 |
| ispartof | Materials research bulletin, 1972-01, Vol.7 (10), p.1035-1040 |
| issn | 0025-5408 1873-4227 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_21810383 |
| source | Elsevier ScienceDirect Journals Complete |
| title | Preparation, single crystal growth, and characterization of PtSi and PtGe |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T03%3A48%3A58IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Preparation,%20single%20crystal%20growth,%20and%20characterization%20of%20PtSi%20and%20PtGe&rft.jtitle=Materials%20research%20bulletin&rft.au=Baughman,%20R.J.&rft.date=1972-01-01&rft.volume=7&rft.issue=10&rft.spage=1035&rft.epage=1040&rft.pages=1035-1040&rft.issn=0025-5408&rft.eissn=1873-4227&rft_id=info:doi/10.1016/0025-5408(72)90155-9&rft_dat=%3Cproquest_cross%3E21810383%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=21810383&rft_id=info:pmid/&rft_els_id=0025540872901559&rfr_iscdi=true |