Preparation, single crystal growth, and characterization of PtSi and PtGe

Due to the highly exothermic reaction of platinum with molten silicon or germanium, a special self-regulating method was employed to produce large polycrystalline ingots of PtSi and PtGe. The equipment and techniques used for the syntheses of materials and the growth of large single crystal ingots are presented. Resistivity, Seebeck coefficient, molar susceptibility, and bulk density were measured and are reported. Both materials showed temperature independent diamagnetism from 4K to 300K.