High-Performance Photodetectors Based on Lead-Free 2D Ruddlesden–Popper Perovskite/MoS2 Heterostructures

Two-dimensional (2D) Ruddlesden–Popper perovskites have attracted great interest for their promising applications in high-performance optoelectronic devices owing to their greatly tunable band gaps, layered characteristics, and better environmental stability over three-dimensional (3D) perovskites....

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Veröffentlicht in:ACS applied materials & interfaces 2019-02, Vol.11 (8), p.8419-8427
Hauptverfasser: Fang, Chen, Wang, Haizhen, Shen, Zixi, Shen, Hongzhi, Wang, Shuai, Ma, Jiaqi, Wang, Jun, Luo, Hongmei, Li, Dehui
Format: Artikel
Sprache:eng
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Zusammenfassung:Two-dimensional (2D) Ruddlesden–Popper perovskites have attracted great interest for their promising applications in high-performance optoelectronic devices owing to their greatly tunable band gaps, layered characteristics, and better environmental stability over three-dimensional (3D) perovskites. Here, we for the first time report on photodetectors based on few-layer MoS2 (n-type) and lead-free 2D perovskite (PEA)2SnI4 (p-type) heterostructures. The heterojunction device is capable of sensing light over the entire visible and near-infrared wavelength range with a tunable photoresponse peak. By using few-layer graphene flakes as the electrical contact, the performance of the heterostructures can be improved with a responsivity of 1100 A/W at 3 V bias, a fast response speed of ∼40 ms under zero bias, and an excellent rectification ratio of 500. Importantly, the quantum efficiency can achieve 38.2% at zero bias, which is comparable or even higher than that of 3D perovskite/2D material photodetectors. Importantly, the spectral response peak of heterojunctions gradually shifts in a wide spectral range from the band edge of MoS2 toward that of (PEA)2SnI4 with the external bias. We believe these 2D perovskite/2D material heterostructures with a great diversity represent an interesting system for investigating the fundamental optoelectronic properties and open up a new pathway toward 2D perovskite-based optoelectronic devices.
ISSN:1944-8244
1944-8252
DOI:10.1021/acsami.8b20538