Enhanced Charge Injection Properties of Organic Field‐Effect Transistor by Molecular Implantation Doping

Organic semiconductors (OSCs) have been widely studied due to their merits such as mechanical flexibility, solution processability, and large‐area fabrication. However, OSC devices still have to overcome contact resistance issues for better performances. Because of the Schottky contact at the metal–OSC interfaces, a non‐ideal transfer curve feature often appears in the low‐drain voltage region. To improve the contact properties of OSCs, there have been several methods reported, including interface treatment by self‐assembled monolayers and introducing charge injection layers. Here, a selective contact doping of 2,3,5,6‐tetrafluoro‐7,7,8,8‐tetracyanoquinodimethane (F4‐TCNQ) by solid‐state diffusion in poly(2,5‐bis(3‐hexadecylthiophen‐2‐yl)thieno[3,2‐b]thiophene) (PBTTT) to enhance carrier injection in bottom‐gate PBTTT organic field‐effect transistors (OFETs) is demonstrated. Furthermore, the effect of post‐doping treatment on diffusion of F4‐TCNQ molecules in order to improve the device stability is investigated. In addition, the application of the doping technique to the low‐voltage operation of PBTTT OFETs with high‐k gate dielectrics demonstrated a potential for designing scalable and low‐power organic devices by utilizing doping of conjugated polymers. An enhanced charge injection in organic field‐effect transistors (OFETs) by molecular implantation doping is demonstrated. With this approach and an etching treatment for improving the off‐current stability, a low‐voltage operation of poly(2,5‐bis(3‐tetradecylthiophen‐2‐yl)thieno[3,2‐b]thiophene) OFETs by using a high‐k gate dielectric is achieved, which is relevant for realizing low‐power organic electronics.