All-Solution-Based Heterogeneous Material Formation for p–n Junction Diodes

All-solution-based devices have potential as the next class of macroscale and multifunctional electronics on versatile amorphous substrates. Different methods and materials have been studied to control the formation of p-type and n-type semiconducting materials because forming active materials for t...

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Veröffentlicht in:ACS applied materials & interfaces 2019-01, Vol.11 (1), p.1021-1025
Hauptverfasser: Yamamoto, Daisuke, Shiomi, Mao, Arie, Takayuki, Akita, Seiji, Takei, Kuniharu
Format: Artikel
Sprache:eng
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Zusammenfassung:All-solution-based devices have potential as the next class of macroscale and multifunctional electronics on versatile amorphous substrates. Different methods and materials have been studied to control the formation of p-type and n-type semiconducting materials because forming active materials for transistors and sensors remains a challenge. This study proposes an approach for solution-based devices in which a p–n junction diode is fabricated using a solution-based InZnO thin film for the n-type semiconductor and a carbon nanotube network film for the p-type semiconductor. Additionally, the barrier height (∼160 meV) is extracted and a p–n junction diode on a plastic film is demonstrated. Although the performance requires further improvements by modifying the interfaces, this printing method may be an interesting approach for all-printed electronics, which can replace conventional Si electronics.
ISSN:1944-8244
1944-8252
DOI:10.1021/acsami.8b15900