Ion pairing in p-InSb induced by X-rays

A decrease in the donor and acceptor concentrations has been observed in p‐InSb under X‐irradiation at low temperatures. Radiation‐induced migration of Ge atoms and donor‐acceptor ion pairing have been suggested. [Russian text ignored].

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Bibliographische Detailangaben
Veröffentlicht in:	Phys. Status Solid (a) 14: No. 2, 439-442(16 Dec 1972) 439-442(16 Dec 1972), 1972-12, Vol.14 (2), p.439-442
Hauptverfasser:	Mashovets, T. V., Vikhlii, G. A., Vitovskii, N. A.
Format:	Artikel
Sprache:	eng
Schlagworte:	ANTIMONY ALLOYS ANTIMONY ALLOYS AND SYSTEMS/In-Sb, radiation effects on carriers in germanium-doped InSb, x CHARGE CARRIERS DOPED MATERIALS GERMANIUM INDIUM ALLOYS INDIUM ALLOYS AND SYSTEMS/In-Sb, radiation effects on carriers in germanium-doped InSb, x INTERMETALLIC COMPOUNDS ION PAIRS LOW TEMPERATURE N74100 -Physics (Solid State)-Radiation Effects P-TYPE CONDUCTORS PHOTON BEAMS RADIATION EFFECTS X RADIATION X RADIATION/effects on carriers in germanium-doped indium antimonide
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Beschreibung
Zusammenfassung:	A decrease in the donor and acceptor concentrations has been observed in p‐InSb under X‐irradiation at low temperatures. Radiation‐induced migration of Ge atoms and donor‐acceptor ion pairing have been suggested. [Russian text ignored].
ISSN:	0031-8965 1521-396X
DOI:	10.1002/pssa.2210140207