Low temperature diffusivity and precipitation of phosphorus in silicon

Low temperature diffusivity and precipitation of phosphorus in silicon

The diffusivity of phosphorus in silicon at 450 and 550°C was measured by determining the size of the precipitates.These diffusivity values exceed by several orders of magnitude those expected on the basis of the figures determined in the high temperature range.To analyze this phenomenon the dopant...

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Veröffentlicht in:Materials chemistry and physics 1984, Vol.10 (1), p.21-30
Hauptverfasser: Morettini, L., Nobili, D.
Format: Artikel
Sprache:eng
Schlagworte:
Condensed matter: structure, mechanical and thermal properties
Diffusion in solids
Diffusion of impurities
Exact sciences and technology
Physics
Transport properties of condensed matter (nonelectronic)
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Zusammenfassung:The diffusivity of phosphorus in silicon at 450 and 550°C was measured by determining the size of the precipitates.These diffusivity values exceed by several orders of magnitude those expected on the basis of the figures determined in the high temperature range.To analyze this phenomenon the dopant diffusivity at 550°C in the tail of the concentration profile was also measured and the data are reported and discussed.
ISSN:0254-0584
1879-3312
DOI:10.1016/0254-0584(84)90075-0