Enhanced Thermoelectric Properties of Boron-Substituted Single-Walled Carbon Nanotube Films

Atomic doping is the most fundamental approach to modulating the transport properties of carbon nanotubes. In this paper, we demonstrate the enhanced thermoelectric properties of boron-substituted single-walled carbon nanotube (B-SWCNT) films. The developed two-step synthesis of large quantities of B-SWCNTs readily enables the measurements of thermoelectricity of bulk B-SWCNT films. Complementary structural characterization implies the unique configuration of boron atoms at the doping sites of SWCNTs, successfully enabling carrier doping to SWCNTs. The developed boron substitution, in combination with chemical doping, is found to substantially improve the thermoelectric properties.