Direct Observation of Perovskite Photodetector Performance Enhancement by Atomically Thin Interface Engineering
Lead trihalide perovskites have been integrated with atomically thin WS2 and served as absorption layers to improve photoresponsivity in photodetectors. The combination of perovskites and two-dimensional (2D) transition-metal dichalcogenide (TMDC) materials provides the platform to study light–matte...
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Veröffentlicht in: | ACS applied materials & interfaces 2018-10, Vol.10 (42), p.36493-36504 |
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Hauptverfasser: | , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Lead trihalide perovskites have been integrated with atomically thin WS2 and served as absorption layers to improve photoresponsivity in photodetectors. The combination of perovskites and two-dimensional (2D) transition-metal dichalcogenide (TMDC) materials provides the platform to study light–matter interactions and charge transfer mechanisms in optoelectronic devices. Herein, conductive and photoconductive atomic force microscopy were used to image the dark current and photocurrent generated in WS2/CH3NH3PbI3 (MAPbI3) heterostructures. Dark current measurement in the applied voltage range displays characteristic diode behavior, which can be well described by thermionic emission theory. Under laser illumination at 532 nm, the spatially resolved photocurrent images exhibit location-dependent photoresponse, where the photocurrent increases remarkably for the WS2/MAPbI3 heterostructures compared with the bare MAPbI3 regions. Furthermore, comparative surface roughness and 2D Fourier analysis of the topographic and current maps reveal that the interfacial conditions of the WS2/MAPbI3 heterojunctions play an important role in the charge separation process. In addition, WS2/MAPbI3-based photodetectors have been fabricated. Our study provides direct evidence that atomically thin TMDC monolayers can effectively assist the charge separation process and improve the light-to-electric energy conversion, which aids in the design principles and understanding of 2D heterostructured optoelectronic devices. |
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ISSN: | 1944-8244 1944-8252 |
DOI: | 10.1021/acsami.8b10971 |