High-power tunable low-noise coherent source at 1.06 μm based on a surface-emitting semiconductor laser
Exploiting III-V semiconductor technologies, vertical external-cavity surface-emitting laser (VECSEL) technology has been identified for years as a good candidate to develop lasers with high power, large coherence, and broad tunability. Combined with fiber amplification technology, tunable single-fr...
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Veröffentlicht in: | Applied optics (2004) 2018-06, Vol.57 (18), p.5224-5229 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Exploiting III-V semiconductor technologies, vertical external-cavity surface-emitting laser (VECSEL) technology has been identified for years as a good candidate to develop lasers with high power, large coherence, and broad tunability. Combined with fiber amplification technology, tunable single-frequency lasers can be flexibly boosted to a power level of several tens of watts. Here, we demonstrate a high-power, single-frequency, and broadly tunable laser based on VECSEL technology. This device emits in the near-infrared around 1.06 µm and exhibits high output power (>100 mW) with a low-divergence diffraction-limited TEM
beam. It also features a narrow free-running linewidth of 55 dB) and continuous broadband tunability greater than 250 GHz ( |
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ISSN: | 1559-128X 2155-3165 1539-4522 |
DOI: | 10.1364/AO.57.005224 |