High-power tunable low-noise coherent source at 1.06  μm based on a surface-emitting semiconductor laser

Exploiting III-V semiconductor technologies, vertical external-cavity surface-emitting laser (VECSEL) technology has been identified for years as a good candidate to develop lasers with high power, large coherence, and broad tunability. Combined with fiber amplification technology, tunable single-fr...

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Veröffentlicht in:Applied optics (2004) 2018-06, Vol.57 (18), p.5224-5229
Hauptverfasser: Chomet, Baptiste, Zhao, Jian, Ferrieres, Laurence, Myara, Mikhael, Guiraud, Germain, Beaudoin, Grégoire, Lecocq, Vincent, Sagnes, Isabelle, Traynor, Nicholas, Santarelli, Giorgio, Denet, Stephane, Garnache, Arnaud
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Sprache:eng
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Zusammenfassung:Exploiting III-V semiconductor technologies, vertical external-cavity surface-emitting laser (VECSEL) technology has been identified for years as a good candidate to develop lasers with high power, large coherence, and broad tunability. Combined with fiber amplification technology, tunable single-frequency lasers can be flexibly boosted to a power level of several tens of watts. Here, we demonstrate a high-power, single-frequency, and broadly tunable laser based on VECSEL technology. This device emits in the near-infrared around 1.06 µm and exhibits high output power (>100  mW) with a low-divergence diffraction-limited TEM beam. It also features a narrow free-running linewidth of 55  dB) and continuous broadband tunability greater than 250 GHz (
ISSN:1559-128X
2155-3165
1539-4522
DOI:10.1364/AO.57.005224