Metal Halide Perovskites: Synthesis, Ion Migration, and Application in Field‐Effect Transistors

The past several years have witnessed tremendous developments of metal halide perovskite (MHP)‐based optoelectronics. Particularly, the intensive research of MHP‐based light‐emitting diodes, photodetectors, and solar cells could probably reform the optoelectronic semiconductor industry. In comparison, in spite of the large intrinsic charge carrier mobility of MHPs, the development of MHP‐based field‐effect transistors (MHP‐FETs) is relatively slow, which is essentially due to the gate‐field screening effect induced by the ion migration and accumulation in MHP‐FETs. This work mainly aims to summarize the recent important work on MHP‐FETs and propose solutions in terms of the development bottleneck of perovskite‐based transistors, in an attempt to boost the research of MHP transistors further. First, the advantages and potential applications of MHP‐FETs are briefly introduced, which is followed by a detailed description of the MHP crystalline structure and various material fabrication techniques. Afterward, MHP‐FETs are discussed, including transistors based on hybrid organic–inorganic perovskites, all‐inorganic perovskites, and lead‐free perovskites. The crystalline structure and synthesis of metal halide perovskites (MHPs) with different dimensions are reviewed, together with a summary and analysis of field effect transistors (FETs) based on perovskites, including hybrid organic–inorganic perovskites, all‐inorganic perovskites, and lead‐free perovskites. The ion‐screening effect can be mitigated in an MHP‐FET by various methods.