Charge Carriers Compensation in a Ferromagnetic Mn-Implanted Si

Secondary ions mass-spectrometry and spreading resistance profiles in the layers of a ferromagnetic Si implanted with Mn has been studied. Czochralski Si wafers both n- and p-type, of high- and low-resistivity, as well as a float zone Si were implanted with impurity fluencies of (1 - 5) x 1016 cm-2....

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Veröffentlicht in:	The open applied physics journal 2009-04, Vol.2 (1), p.20-22
Hauptverfasser:	Orlov, A. F., Balagurov, L. A., Kulemanov, I. V., Parkhomenko, Yu. N., Kartavykh, A. V., Saraikin, V. V., Agafonov, Yu. A., Zinenko, V. I.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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