Charge Carriers Compensation in a Ferromagnetic Mn-Implanted Si

Secondary ions mass-spectrometry and spreading resistance profiles in the layers of a ferromagnetic Si implanted with Mn has been studied. Czochralski Si wafers both n- and p-type, of high- and low-resistivity, as well as a float zone Si were implanted with impurity fluencies of (1 - 5) x 1016 cm-2. The Mn impurity was found to compensate acceptors in a high-resistivity p-Si and donors in a low-resistivity n-Si. Only the small part of Mn ions in Si apparently incorporates into the Si crystal lattice, occupies the interstitial sites and the appropriate energy levels (Mni)-/0 and (Mni) + /+ + equal to Ec - 0.12 eV for n-type Si and Ev + 0.32 eV for p-type Si, respectively, are activated after vacuum annealing. PACS: 61.72.uf; 71.55.Cu; 72.20.Jv