A C-Te-based binary OTS device exhibiting excellent performance and high thermal stability for selector application

In this letter, we demonstrate a new binary ovonic threshold switching (OTS) selector device scalable down to ø30 nm based on C-Te. Our proposed selector device exhibits outstanding performance such as a high switching ratio (Ion/Ioff > 105), an extremely low off-current (∼1 nA), an extremely fas...

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Veröffentlicht in:Nanotechnology 2018-08, Vol.29 (34), p.345202-345202
Hauptverfasser: Chekol, Solomon Amsalu, Yoo, Jongmyung, Park, Jaehyuk, Song, Jeonghwan, Sung, Changhyuck, Hwang, Hyunsang
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Sprache:eng
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Zusammenfassung:In this letter, we demonstrate a new binary ovonic threshold switching (OTS) selector device scalable down to ø30 nm based on C-Te. Our proposed selector device exhibits outstanding performance such as a high switching ratio (Ion/Ioff > 105), an extremely low off-current (∼1 nA), an extremely fast operating speed of
ISSN:0957-4484
1361-6528
DOI:10.1088/1361-6528/aac9f5