A C-Te-based binary OTS device exhibiting excellent performance and high thermal stability for selector application
In this letter, we demonstrate a new binary ovonic threshold switching (OTS) selector device scalable down to ø30 nm based on C-Te. Our proposed selector device exhibits outstanding performance such as a high switching ratio (Ion/Ioff > 105), an extremely low off-current (∼1 nA), an extremely fas...
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Veröffentlicht in: | Nanotechnology 2018-08, Vol.29 (34), p.345202-345202 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | In this letter, we demonstrate a new binary ovonic threshold switching (OTS) selector device scalable down to ø30 nm based on C-Te. Our proposed selector device exhibits outstanding performance such as a high switching ratio (Ion/Ioff > 105), an extremely low off-current (∼1 nA), an extremely fast operating speed of |
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ISSN: | 0957-4484 1361-6528 |
DOI: | 10.1088/1361-6528/aac9f5 |