Tunnelling spectroscopy of gate-induced superconductivity in MoS2

The ability to gate-induce superconductivity by electrostatic charge accumulation is a recent breakthrough in physics and nanoelectronics. With the exception of LaAlO 3 /SrTiO 3 interfaces, experiments on gate-induced superconductors have been largely confined to resistance measurements, which provi...

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Veröffentlicht in:Nature nanotechnology 2018-06, Vol.13 (6), p.483-488
Hauptverfasser: Costanzo, Davide, Zhang, Haijing, Reddy, Bojja Aditya, Berger, Helmuth, Morpurgo, Alberto F.
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Sprache:eng
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Zusammenfassung:The ability to gate-induce superconductivity by electrostatic charge accumulation is a recent breakthrough in physics and nanoelectronics. With the exception of LaAlO 3 /SrTiO 3 interfaces, experiments on gate-induced superconductors have been largely confined to resistance measurements, which provide very limited information about the superconducting state. Here, we explore gate-induced superconductivity in MoS 2 by performing tunnelling spectroscopy to determine the energy-dependent density of states (DOS) for different levels of electron density n . In the superconducting state, the DOS is strongly suppressed at energy smaller than the gap Δ , which is maximum ( Δ  ~2 meV) for n of ~1 × 10 14  cm −2 and decreases monotonously for larger n . A perpendicular magnetic field B generates states at E  
ISSN:1748-3387
1748-3395
DOI:10.1038/s41565-018-0122-2