Highly Efficient 17.6% Tin–Lead Mixed Perovskite Solar Cells Realized through Spike Structure

Frequently observed high V oc loss in tin–lead mixed perovskite solar cells is considered to be one of the serious bottle-necks in spite of the high attainable Jsc due to wide wavelength photon harvesting. An amicable solution to minimize the V oc loss up to 0.50 V has been demonstrated by introduci...

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Veröffentlicht in:Nano letters 2018-06, Vol.18 (6), p.3600-3607
Hauptverfasser: Kapil, Gaurav, Ripolles, Teresa S, Hamada, Kengo, Ogomi, Yuhei, Bessho, Takeru, Kinoshita, Takumi, Chantana, Jakapan, Yoshino, Kenji, Shen, Qing, Toyoda, Taro, Minemoto, Takashi, Murakami, Takurou N, Segawa, Hiroshi, Hayase, Shuzi
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Sprache:eng
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Zusammenfassung:Frequently observed high V oc loss in tin–lead mixed perovskite solar cells is considered to be one of the serious bottle-necks in spite of the high attainable Jsc due to wide wavelength photon harvesting. An amicable solution to minimize the V oc loss up to 0.50 V has been demonstrated by introducing an n-type interface with spike structure between the absorber and electron transport layer inspired by highly efficient Cu­(In,Ga)­Se2 solar cells. Introduction of a conduction band offset of ∼0.15 eV with a thin phenyl-C61-butyric acid methyl ester layer (∼25 nm) on the top of perovskite absorber resulted into improved V oc of 0.75 V leading to best power conversion efficiency of 17.6%. This enhancement is attributed to the facile charge flow at the interface owing to the reduction of interfacial traps and carrier recombination with spike structure as evidenced by time-resolved photoluminescence, nanosecond transient absorption, and electrochemical impedance spectroscopy measurements.
ISSN:1530-6984
1530-6992
DOI:10.1021/acs.nanolett.8b00701