Low‐Temperature Wafer‐Scale Deposition of Continuous 2D SnS2 Films

Semiconducting 2D materials, such as SnS2, hold immense potential for many applications ranging from electronics to catalysis. However, deposition of few‐layer SnS2 films has remained a great challenge. Herein, continuous wafer‐scale 2D SnS2 films with accurately controlled thickness (2 to 10 monolayers) are realized by combining a new atomic layer deposition process with low‐temperature (250 °C) postdeposition annealing. Uniform coating of large‐area and 3D substrates is demonstrated owing to the unique self‐limiting growth mechanism of atomic layer deposition. Detailed characterization confirms the 1T‐type crystal structure and composition, smoothness, and continuity of the SnS2 films. A two‐stage deposition process is also introduced to improve the texture of the films. Successful deposition of continuous, high‐quality SnS2 films at low temperatures constitutes a crucial step toward various applications of 2D semiconductors. Continuous, large‐area few‐layer films of 2D semiconductor SnS2 are deposited by a low‐temperature process combining atomic layer deposition with mild postdeposition annealing. Accurate thickness control and excellent film uniformity on 5 × 5 cm2 substrates and nanoscale trenches are achieved. The films are highly crystalline, n‐type SnS2 with 1T crystal structure, making them promising for various semiconductor applications.