Atomic Layer Deposition of V1-xMoxO2 Thin Films, Largely Enhanced Luminous Transmittance and Solar Modulation

Atomic Layer Deposition of V1-xMoxO2 Thin Films, Largely Enhanced Luminous Transmittance and Solar Modulation

V1-xMoxO2 thin films were fabricated by nanolamination of VO2/MoO3 alternating layers using atomic layer deposition (ALD) process, in which tetrakis-dimethyl-amino vanadium (IV) [V(NMe2)4] and molybdenum hexacarbonyl (VI) [Mo(CO)6] were used as vanadium precursor and molybdenum precursor respectivel...

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Veröffentlicht in:ACS applied materials & interfaces 2018-02, Vol.10 (7), p.6601-6607
Hauptverfasser: Lv, Xinrui, Cao, Yunzhen, Yan, Lu, Li, Ying, Zhang, Yuzhi, Song, Lixin
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container_issue 7
container_start_page 6601
container_title ACS applied materials & interfaces
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creator Lv, Xinrui
Cao, Yunzhen
Yan, Lu
Li, Ying
Zhang, Yuzhi
Song, Lixin
description V1-xMoxO2 thin films were fabricated by nanolamination of VO2/MoO3 alternating layers using atomic layer deposition (ALD) process, in which tetrakis-dimethyl-amino vanadium (IV) [V(NMe2)4] and molybdenum hexacarbonyl (VI) [Mo(CO)6] were used as vanadium precursor and molybdenum precursor respectively. The dopant content of V1-xMoxO2 films was controlled by adjusting MoO3 cycle percentage (PMo) in ALD pulse sequence, which was varied from 2% to 10%. Effects of PMo on V1-xMoxO2 crystal structure, morphology, semiconductor-to-metal transition (SMT) properties and optical transmittance were studied. A linear reduction of phase transition temperature (Tc) by approximately -11 °C/cycle% Mo was observed for V1-xMoxO2 films within PMo≤5%. Notably, dramatic enhanced luminous transmittance (Tlum=63.8%) and solar modulation (ΔTsol=23.5%) were observed for V1-xMoxO2 film with PMo=7%.
doi_str_mv 10.1021/acsami.7b16479
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