Atomic Layer Deposition of V1-xMoxO2 Thin Films, Largely Enhanced Luminous Transmittance, Solar Modulation

V1-xMoxO2 thin films were fabricated by nanolamination of VO2/MoO3 alternating layers using atomic layer deposition (ALD) process, in which tetrakis-dimethyl-amino vanadium(IV) [V(NMe2)4] and molybdenum hexacarbonyl(VI) [Mo(CO)6] were used as vanadium and molybdenum precursors, respectively. The dopant content of V1-xMoxO2 films was controlled by adjusting MoO3 cycle percentage (PMo) in ALD pulse sequence, which varied from 2 to 10%. Effects of PMo on V1-xMoxO2 crystal structure, morphology, semiconductor-to-metal transition properties, and optical transmittance were studied. A linear reduction of phase transition temperature (Tc) by approximately -11 °C/cycle % Mo was observed for V1-xMoxO2 films within PMo ≤ 5%. Notably, dramatic enhanced luminous transmittance (Tlum = 63.8%) and solar modulation (ΔTsol = 23.5%) were observed for V1-xMoxO2 film with PMo = 7%.