Excess arsenic and point defects in GaAS grown by molecular beam epitaxy at low temperatures

Excess arsenic and point defects in GaAS grown by molecular beam epitaxy at low temperatures

Defect formation in low temperature molecular beam epitaxy GaAs layers (LT-GaAs) is discussed. The influence of growth conditions (temperature, III/V flux ratio) on internal structure, type, and concentration of electrically and optically active point defects is discussed. The effect of annealing on...

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Veröffentlicht in:Journal of structural chemistry 2004-01, Vol.45 (S1), p.S88-S95
Hauptverfasser: Lavrent’eva, L. G., Vilisova, M. D., Bobrovnikova, I. A., Toropov, S. E., Preobrazhenskii, V. V., Semyagin, B. R., Putyato, M. A., Chaldyshev, V. V.
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Sprache:eng
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Zusammenfassung:Defect formation in low temperature molecular beam epitaxy GaAs layers (LT-GaAs) is discussed. The influence of growth conditions (temperature, III/V flux ratio) on internal structure, type, and concentration of electrically and optically active point defects is discussed. The effect of annealing on the formation of arsenic precipitates (clusters) is considered.
ISSN:0022-4766
1573-8779
DOI:10.1007/s10947-006-0100-7